Fabrication and Characterization of ZnO Nanowire Transistors

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Recently, a variety of physical and chemical methods have been used to synthesize and obtain 1- dimensional semiconductor nanostructures. For the cause of easier nanostructure formation and device applications, we begin this study with the investigation in growth mechanism and well- controlled condition to synthesize 1-dimensional ZnO nanowires. For the low dimensional structure of nanowire, the manipulation of individual nanowire has become an unsettled and crucial issue. Therefore, we use a printing method to realize the nanowire alignment in broad classes. In addition, our investigators would explore the correlation between the quality of 1- dimensional material and electronic transport properties of ZnO nanowire-based transistors. In the fabrication of nanowire transistors, the existing common method of dielectrophoresis (DEP) process would impose a contact problem, and an additional or subsequent metallization is necessary for the electronic connection. Therefore, we will develop a novel method to simultaneously obtain aligned nanowire arrays and device pattering by combining DEP and imprinting processes.